Enhancing the Curie Temperature of Ferromagnetic Semiconductor (Ga,Mn)As to 200 K via Nanostructure Engineering-Reference-Cited by-同舟云学术

Enhancing the Curie Temperature of Ferromagnetic Semiconductor (Ga,Mn)As to 200 K via Nanostructure Engineering

Published:2011-06-27 Issue:7 Volume:11 Page:2584-2589
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Chen Lin¹,Yang Xiang¹,Yang Fuhua¹,Zhao Jianhua¹,Misuraca Jennifer²,Xiong Peng²,von Molnár Stephan²

Affiliation:

1. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China

2. Department of Physics, Florida State University, Tallahassee, Florida 32306, United States

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl201187m

Reference36 articles.

1. (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

2. Ferromagnetic Semiconductor Heterostructures for Spintronics

3. Electrical Manipulation of Magnetization Reversal in a Ferromagnetic Semiconductor

4. Electric-field control of ferromagnetism in (Ga,Mn)As

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