Out‐of‐Plane Superexchange Interaction Enhanced Ferromagnetism in Semiconducting Monolayer Cr2Se3

Author:

Lu Shipeng123,He Zhonglin4,Pan Yinping1,Guo Zhiqiang123,Yang Yichen1,Wu Fan35,Song Yekai6,Li Zhuojun7,Liu Zhongkai38,Liu Zhengtai9,Shen Dawei10,Chen Lei111,Ma Yandong4,Tang Shujie12ORCID,Xie Xiaoming1

Affiliation:

1. State Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China

2. 2020 X‐Lab Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China

3. School of Physical Science and Technology ShanghaiTech University Shanghai 201210 China

4. School of Physics State Key Laboratory of Crystal Materials Shandong University Shandanan Street 27 Jinan 250100 China

5. Lingang Laboratory Shanghai 200031 China

6. Shandong Provincial Key Laboratory of Monocrystalline Silicon Semiconductor Materials and Technology College of Chemistry and Chemical Engineering Dezhou University Dezhou 253023 China

7. Novel Materials Lab ShanghaiTech University Shanghai 201210 China

8. ShanghaiTech Laboratory for Topological Physics Shanghai 201210 People's Republic of China

9. Shanghai Synchrotron Radiation Facility Shanghai Advanced Research Institute Chinese Academy of Sciences Shanghai 201210 China

10. National Synchrotron Radiation Laboratory University of Science and Technology of China Hefei Anhui 230029 China

11. University of the Chinese Academy of Sciences Beijing 100049 China

Abstract

Abstract2D magnetic semiconductors exhibit great potential for next‐generation spintronics, but realizing their full capabilities has been hindered by the low Curie temperatures (Tc) below 50 K observed in current materials. Here, a new mechanism to substantially enhance the Tc of 2D semiconducting materials through incorporating both in‐plane and out‐of‐plane superexchange interactions enabled by structural design is demonstrated. Specifically, monolayer Cr2Se3 is synthesized with a five‐layer Se–Cr–Se–Cr–Se atomic structure using molecular beam epitaxy (MBE). This unique structure not only possesses optimized in‐plane superexchange interaction but also incorporates out‐of‐plane Cr–Se–Cr couplings. Scanning tunneling spectroscopy (STS) and angular‐resolved photoemission spectroscopy (ARPES) confirm its semiconducting nature. Remarkably, the ferromagnetic phase transition observed by ARPES and Magnetic Force Microscopy (MFM) indicated that its Tc is up to 230 K. This not only establishes a new record for Tc in 2D ferromagnetic semiconductor materials but also introduces a novel approach to modulating materials' properties by manipulating the vertical dimension in 2D materials.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Chinese Academy of Sciences

Shanghai Rising-Star Program

Publisher

Wiley

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