Enhancing Magnetic Damping under GaAs Band-Edge Photoexcitation in a Co<sub>2</sub>FeAl/<i>n</i>-GaAs Heterojunction-Reference-Cited by-同舟云学术

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Enhancing Magnetic Damping under GaAs Band-Edge Photoexcitation in a Co₂FeAl/n-GaAs Heterojunction

Published:2024-03-22 Issue:13 Volume:16 Page:17041-17050
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kong Chongtao¹²^ORCID,Song Lin¹²^ORCID,Zhao Xupeng¹²^ORCID,Wang Hailong¹²^ORCID,Zhao Jianhua¹²^ORCID,Yuan Guodong¹²^ORCID,Zhang Xinhui¹²^ORCID

Affiliation:

1. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China

2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China

Funder

National Key Research and Development Program of China

Youth Innovation Promotion Association of the Chinese Academy of Sciences

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.4c01858

Reference69 articles.

1. Reciprocal spin Hall effects in conductors with strong spin–orbit coupling: a review

2. Spin Hall effects

3. Spin-to-charge conversion using Rashba coupling at the interface between non-magnetic materials

4. Enhanced Gilbert Damping in Thin Ferromagnetic Films

5. Spin pumping and magnetization dynamics in metallic multilayers

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