Migration and interaction of point defects at room temperature in crystalline silicon-Reference-Cited by-同舟云学术

Migration and interaction of point defects at room temperature in crystalline silicon

Published:1998-08 Issue:8 Volume:21 Page:1-52
ISSN:1826-9850
Container-title:La Rivista del Nuovo Cimento
language:en
Short-container-title:Riv. Nuovo Cim.

Author:

Privitera V.,Coffa S.,Priolo F.,Rimini E.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/BF02874306.pdf

Reference68 articles.

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4. Mayer J. W. andLau S. S.,Electronic Materials Science (Mc Millan, New York) 1989.

5. Watkins G. D., Troxell J. R. andChatterjee A. P., inDefects and Radiation Effects in Semiconductors, edited byJ. H. Albany,IOP Conf. Ser., No.46 (IOP Publishing, Bristol) 1978, p. 16.

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