Publisher
Springer Berlin Heidelberg
Reference155 articles.
1. Watkins GD (1999) Vacancies and interstitials and their interactions with other defects in silicon. In: Abe T, Bullis WM, Kobayashi S, Lin W, Wagner P (eds) Proc third int symposium on defects in silicon. The Electrochem Soc, Pennington, NJ, vol 99–1, pp 38–52
2. Watkins GD (2000) Intrinsic defects in silicon. Mat Sci Semicond Processing 3: 227–235
3. Hazdra P, Rubes J, Vobecky J (1999) Divacancy profiles in MeV helium irradiated silicon from reverse I-V measurement. Nucl Instrum Meth Phys Research B 159: 207–217
4. Simoen E, Claeys C, Gaubas E, Ohyama H (2000) Impact of the divacancy (?) on the generation-recombination properties of 10 MeV proton irradiated Float-Zone silicon diodes. Nucl Instrum Meth Phys Research A 439: 310–318
5. Lee Y-H, Corbett JW (1976) EPR studies of defects in electron-irradiated silicon: A triplet state of vacancy-oxygen complexes. Phys Rev B 13: 2653–2666
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献