Author:
Kopf R. F.,Hamm R. A.,Malik R. J.,Ryan R. W.,Geva M.,Burm J.,Tate A.
Publisher
Springer Science and Business Media LLC
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
5 articles.
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1. Failure mechanisms in compound semiconductor electron devices;Handbook of Advanced Electronic and Photonic Materials and Devices;2001
2. Oxygen plasma induced degradation in InGaAs/InP heterostructures;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000
3. Optimization of the base electrode for InGaAs/InP DHBT structures with a buried emitter-base junction;Journal of Electronic Materials;1998-11
4. Side-by-side wafer bonding of InP for use with stepper-based lithography;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-07
5. Degradation of the device characteristics of InGaAs/InP heterostructures after oxygen treatments;Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107)