Improved breakdown of AlInAs/InGaAs heterojunction bipolar transistors-Reference-Cited by-同舟云学术

Improved breakdown of AlInAs/InGaAs heterojunction bipolar transistors

Published:1991 Issue:25 Volume:27 Page:2340
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Fullowan T.R.,Pearton S.J.,Kopf R.F.,Chen Y.K.,Chin M.A.,Ren F.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19911449?crawler=true&mimetype=application/pdf

Reference8 articles.

1. Mishra, U.K.: ‘48 GHz AlInAs/GaInAs heterojunction bipolar transistors’, IEDM Tech. Dig., 1988 December), p. 873–875

2. Stanchina, W.E., Rensch, D.B., Jensen, J.F., Mishra, U.K., Karodorian, T.V., Pierce, M.P., and Allen, Y.K.: ‘Processing techniques for the fabrication of high speed AlInAs/InGaAs HBT circuits’, SOTAPOCS XII, Montreal 1990 May, 10)

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