Author:
Ren F.,Cho A.Y.,Sivco D.L.,Pearton S.J.,Abernathy C.R.
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Reference8 articles.
1. Abe, M., Mimura, T., Nishiuchi, K., Shibatomi, A., Kobayashi, M., and Misugi, T.: Dingle, R., Ultra high speed HEMT integrated circuits: Semiconductors and semimetals, 24, (Academic Press New York 1988)
2. Tu, C.W., Dingle, R., and Hendel, R.H.: Ferry, D.K., MBE and the technology of SDHTs; GaAs technology, (SAMS Indianapolis 1985)
3. Pearton, S.J., and Shah, N.J.: Sze, S.M., High speed semiconductor devices, (Wiley-Interscience New York 1990)
4. Sn doping of GaAs and AlGaAs by MOMBE using tetraethyltin
5. AlGaAs/GaAs based HEMTs, inverters, and ring oscillators with InGaAs, and AlGaAs etch-stop layers
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