Nonalloyed ohmic contact to n-GaAs with GaS/GaAs quasi-metal-insulator-semiconductor structure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122004
Reference12 articles.
1. Recent developments in ohmic contacts for III–V compound semiconductors
2. Effects of interfacial microstructure on uniformity and thermal stability of AuNiGe ohmic contact ton‐type GaAs
3. Contact resistances of NiGeAu, PdGeTiPt, and TiPd ohmic contacts to GaAs and their temperature dependence from 4.2 to 350 K
4. Use of Sn-doped GaAs for non-alloyed ohmic contacts to HEMTs
5. Very low resistance nonalloyed ohmic contacts using low‐temperature molecular beam epitaxy of GaAs
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