Contact resistances of NiGeAu, PdGeTiPt, and TiPd ohmic contacts to GaAs and their temperature dependence from 4.2 to 350 K-Reference-Cited by-同舟云学术

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Contact resistances of NiGeAu, PdGeTiPt, and TiPd ohmic contacts to GaAs and their temperature dependence from 4.2 to 350 K

Published:1996-12-30 Issue:27 Volume:69 Page:4197-4199
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Jones K. A.,Linfield E. H.,Frost J. E. F.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.116984

Reference16 articles.

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Significant effect of thin oxide layer on characteristics of p-InGaN/GaN nonalloyed ohmic contacts;Journal of Applied Physics;2023-08-01

2. Investigating the RTA Treatment of Ohmic Contacts to n-Layers of Heterobipolar Nanoheterostructures;Semiconductors;2018-12

3. Diffusion theory and optimization of ohmic contacts to n-layer of bipolar nanoheterostructures;Journal of Physics: Conference Series;2017-11

4. Optimization of ohmic contacts to n-GaAs layers of heterobipolar nanoheterostructures;Russian Microelectronics;2017-07

5. Sensitivity and noise of micro-Hall magnetic sensors based on InGaAs quantum wells;Journal of Applied Physics;2016-01-14

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