An 8/10 bit 200/100MS/s configurable asynchronous SAR ADC

Author:

Zhu Zhangming,Xiao Yu,Xu Lifeng,Ding Haoyu,Yang Yintang

Publisher

Springer Science and Business Media LLC

Subject

Surfaces, Coatings and Films,Hardware and Architecture,Signal Processing

Reference12 articles.

1. Min, B., et al. (2003). A 69-mW 10-bit 80-MSample/s pipelined CMOS ADC. IEEE Journal of Solid-State Circuits, 38(12), 2031–2039.

2. Shin, C.-S., & Ahn, G.-C. (2011). A 10-bit 100-MS/s dual-channel pipelined ADC using dynamic memory effect cancellation technique. IEEE Journal of Solid-State Circuits, 46(5), 274–278.

3. Wei, H., et al. (2012). An 8-b 400-MS/s 2-b-per-cycle SAR ADC with resistive DAC. IEEE Journal of Solid-State Circuits, 47(11), 2763–2772.

4. Liu, C.-C., et al., (2010). A 10b 100MS/s 1.13mW SAR ADC with binary-scaled error compensation. In IEEE Journal of Solid-State Circuits Conference (pp. 386–387).

5. Ginsburg, B. P., & Chandrakasan, A. P. (2007). Highly interleaved 5-bit, 250-MSample/s, 1.2-mW ADC with redundant channels in 65-nm CMOS. IEEE Journal of Solid-State Circuits, 43(12), 2641–2650.

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