A unified hybrid compact model of β-Ga2O3 Schottky barrier diodes for mixer and rectifier applications-Reference-Cited by-同舟云学术

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A unified hybrid compact model of β-Ga2O3 Schottky barrier diodes for mixer and rectifier applications

Published:2021-09-10 Issue:11 Volume:64 Page:
ISSN:1674-733X
Container-title:Science China Information Sciences
language:en
Short-container-title:Sci. China Inf. Sci.

Author:

Zhou Kai,He Qiming,Jian Guangzhong,Xu Guangwei,Wu Feihong,Li Yao,Hu Zhuangzhuang,Feng Qian,Zhao Xiaolong,Long Shibing

Publisher

Springer Science and Business Media LLC

Subject

General Computer Science

Link

https://link.springer.com/content/pdf/10.1007/s11432-021-3224-2.pdf

Reference8 articles.

1. Konishi K, Goto K, Murakami H, et al. 1-kV vertical Ga2O3 field-plated Schottky barrier diodes. Appl Phys Lett, 2017, 110: 103506

2. Pearton S J, Ren F, Tadjer M, et al. Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS. J Appl Phys, 2018, 124: 220901

3. Li W S, Nomoto K, Hu Z Y, et al. Field-plated Ga2O3 trench Schottky barrier diode with a BV2/Ron,sp of up to 0.95 GW/cm2. IEEE Electron Device Lett, 2020, 41: 107–110

4. He Q M, Mu W X, Fu B, et al. Schottky barrier rectifier based on (100) β-Ga2O3 and its DC and AC characteristics. IEEE Electron Device Lett, 2018, 39: 556–559

5. Latreche A. Combined thermionic emission and tunneling mechanisms for the analysis of the leakage current for Ga2O3 Schottky barrier diodes. SN Appl Sci, 2019, 1: 188

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2. Performance improvement of β-Ga2O3 SBD-based rectifier with embedded microchannels in ceramic substrate;Science China Information Sciences;2024-04-19

3. Vertical Vertical β-Ga₂O₃ Power Diodes: From Interface Engineering to Edge Termination;IEEE Transactions on Electron Devices;2024-03

4. Large-area vertical-geometry Pt/(010) β-Ga2O3 Schottky barrier diodes and their temperature-dependent electrical properties;Journal of Physics and Chemistry of Solids;2023-06

5. Review on interface engineering of low leakage current and on-resistance for high-efficiency Ga2O3-based power devices;Materials Today Physics;2022-10

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