Large-area vertical-geometry Pt/(010) β-Ga2O3 Schottky barrier diodes and their temperature-dependent electrical properties
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference36 articles.
1. High-temperature electronics-a role for wide bandgap semiconductors?;Neudeck;Proc. IEEE,2002
2. An overview of the ultrawide bandgap Ga2O3 semiconductor-based Schottky barrier diode for power electronics application;Xue;Nanoscale Res. Lett.,2018
3. 2.6 kV NiO/Ga2O3 heterojunction diode with superior high-temperature voltage blocking capability;Hao,2022
4. Low defect density and small I-V curve hysteresis in NiO/β-Ga2O3 pn diode with a high PFOM of 0.65 GW/cm2;Hao;Appl. Phys. Lett.,2021
5. Ga2O3 Schottky barrier diodes fabricated by using single-crystal β-Ga2O3 (010) substrates;Sasaki;IEEE Electron. Device Lett.,2013
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