Vertical Vertical <i>β</i>-Ga₂O₃ Power Diodes: From Interface Engineering to Edge Termination-Reference-Cited by-同舟云学术

Vertical Vertical β-Ga₂O₃ Power Diodes: From Interface Engineering to Edge Termination

Published:2024-03 Issue:3 Volume:71 Page:1606-1617
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wen Junpeng¹^ORCID,Hao Weibing¹,Han Zhao¹^ORCID,Wu Feihong¹,Li Qiuyan¹^ORCID,Liu Jinyang¹,Liu Qi¹^ORCID,Zhou Xuanze¹,Xu Guangwei¹^ORCID,Yang Shu¹^ORCID,Long Shibing¹^ORCID

Affiliation:

1. School of Microelectronics, University of Science and Technology of China (USTC), Hefei, China

Funder

National Natural Science Foundation of China

University of Science and Technology of China (USTC) Research Funds of the Double First-Class Initiative

Collaborative Innovation Program of Hefei Science Center, Chinese Academy of Sciences

JieBang Headed Project of Changsha City Hunan Province

Opening Project of the Key Laboratory of Nanodevices and Applications in Suzhou Institute of Nano-Tech and Nano-Bionics of CAS

Center for Micro and Nanoscale Research and Fabrication, the Information Science Laboratory Center of USTC

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10457976/10439063.pdf?arnumber=10439063

Reference98 articles.

1. A review of Ga2O3materials, processing, and devices

2. β-Gallium oxide power electronics

3. Vertical β-Ga₂O₃ Power Transistors: A Review

4. Vertical β-Ga₂O₃ power electronics

5. Multidimensional device architectures for efficient power electronics

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