The mobility of two-dimensional electron gas in AlGaN/GaN heterostructures with varied Al content
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Computer Science
Link
http://link.springer.com/content/pdf/10.1007/s11432-008-0056-7.pdf
Reference24 articles.
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2. Ambacher O, Smart J, Shealy J R, et al. Two-dimensional gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures. J Appl Phys, 1999, 85: 3222–3233
3. Ambacher O, Foutz B, Smart J, et al. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures. J Appl Phys, 2000, 87: 334–344
4. Keller S, Parish G, Fini P T, et al. Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructures. J Appl Phys, 1999, 86: 5850–5857
5. Wu Y-F, Keller B P, Fini P, et al. High Al-content AlGaN/GaN MODFET’s for ultrahigh performance. IEEE Elect Dev Lett, 1998, 19: 50–53
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