Investigation of Nano-Heat-Transfer Variability of AlGaN/GaN-Heterostructure-Based High-Electron-Mobility Transistors

Author:

Mzoughi Haikel12,Nasri Faouzi13,Almoneef Maha4ORCID,Soltani Sonia5,Mbarek Mohamed6,Guizani Amenallah12

Affiliation:

1. Laboratory of Thermal Processes, Research and Technology Centre of Energy, Hammam Lif 2100, Tunisia

2. Faculty of Sciences of Tunis, University of Tunis El-Manar, Tunis 2092, Tunisia

3. Center for Research in Microelectronics & Nanotechnology, Sousse 4000, Tunisia

4. Department of Physics, College of Science, Princess Nourah Bint Abdulrahman University, P.O. Box 84428, Riyadh 11671, Saudi Arabia

5. Department of Physics, College of Science and Arts, Qassim University, Dariyah 58251, Saudi Arabia

6. Asymmetric Synthesis and Molecular Engineering of Materials for Organic Electronic, LR18ES19, University of Monastir, Monastir 5000, Tunisia

Abstract

The aim of this work is to propose an electrothermal model for predicting the electron mobility, the effective thermal conductivity, and the operating temperature of AlGaN/GaN HEMT devices. The suggested model comprises an enhanced ballistic-diffusive model (BDE) coupled with a drift-diffusion model (D-D). Furthermore, the given model considers total electron mobility, which depends on mobility degradation caused by phonon interactions, surface imperfections, and carrier mobility inside the bulk GaN material. The model is validated based on available experimental and numerical results, and good concordance is observed. It is found that the degradation of the drain current is due to electron mobility and effective thermal conductivity degradation. The output characteristic’s degradation due to changing device temperature is analyzed. We demonstrate that for gate biases of −1 V, 0 V, and 1 V, operating temperatures of 390 K, 470 K, and 570 K are obtained when the drain currents are 0.1 A, 0.24 A, and 0.38 A, respectively. Furthermore, we demonstrate that the temperature is maximal in the active region. The temporal temperature evolution presents the same trends with the same amplitude compared to the experimental data, and the error does not exceed 5%.

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,Hardware and Architecture,Signal Processing,Control and Systems Engineering

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Nano Thermal Simulation of Graphene Field Effect Transistor Based on Ballistic Diffusive Model;International Journal of High Speed Electronics and Systems;2024-07-31

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