CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance-Reference-Cited by-同舟云学术

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CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance

Published:2019-12 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE International Electron Devices Meeting (IEDM)
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Author:

Peralagu U.,De Jaeger B.,Fleetwood D. M.,Wambacq P.,Zhao M.,Parvais B.,Waldron N.,Collaert N.,Alian A.,Putcha V.,Khaled A.,Rodriguez R.,Sibaja-Hernandez A.,Chang S.,Simoen E.,Zhao S. E.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8971803/8993428/08993582.pdf?arnumber=8993582

Cited by 63 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High Performance CMOS-Compatible RF GaN-on-Silicon HEMTs With Low-Resistive and Highly-Conformal Ohmic Contacts;IEEE Transactions on Electron Devices;2024-09

2. Investigation of the Dislocation Behavior of 6- and 8-Inch AlGaN/GaN HEMT Structures with a Thin AlGaN Buffer Layer Grown on Si Substrates;Inorganics;2024-07-30

3. A Comparative Study of Methods for Calculating the Dislocation Density in GaN-on-Si Epitaxial Wafers;Micromachines;2024-07-25

4. Metal‐Organic Chemical Vapor Deposition Regrowth of Highly Doped n⁺ (In)GaN Source/Drain Layers for Radio Frequency Transistors;physica status solidi (a);2024-06-02

5. Elucidating the formation mechanisms of the parasitic channel with buffer-free GaN/Si hetero-bonding structures;Applied Physics Letters;2024-05-06

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