Nano Thermal Simulation of Graphene Field Effect Transistor Based on Ballistic Diffusive Model

Abstract

This paper investigates temperature evolution in graphene field-effect transistors. We present a refined Ballistic-diffusive equation model (BDE) tailored for scrutinizing the phonon transport within GNRFET transistors. Furthermore, we examine the influence of the channel length on thermal characteristics. COMSOL Multiphysics is employed to compute the phonon transport and temperature distribution in nano-GNRFET. Our results reveal that the phonon transport anticipated by the suggested BDE model closely corresponds to that derived from the Boltzmann transport equation. The proposed model proficiently gauges the thermal performance of GNRFET, with the outcomes suggesting that the characteristic length of the GNR has a negligible impact on the temperature increase.