Ge surface passivation by GeO2 fabricated by N2O plasma oxidation
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Computer Science
Link
http://link.springer.com/content/pdf/10.1007/s11432-014-5180-y.pdf
Reference26 articles.
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2. Chellappan R K, Gajula D R, McNeil D, et al. High temperature thermal ttability of the HfO2/Ge(100) interface as a function of surface preparation studied by synchrotron radiation corelevel photoemission. Appl Surf Sci, 2014, 292: 345–349
3. Shibayama S, Kato K, Sakashita M, et al. Understanding of interface structures and reaction mechanisms induced by Ge or GeO diffusion in Al2O3/Ge structure. Appl Phys Lett, 2013, 103: 082114
4. Chang H C, Lin C M, Huang C H, et al. Hysteresis reduction by fluorine incorporation into high permittivity tetragonal ZrO2 on Ge. Appl Phys Lett, 2014, 104: 032902
5. Seo K, McIntyre P C, Sun S, et al. Chemical states and electronic structure of a HfO2/Ge(001) interface. Appl Phys Lett, 2005, 87: 042902
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