Chemical states and electronic structure of a HfO2∕Ge(001) interface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2006211
Reference15 articles.
1. Germanium MOS capacitors incorporating ultrathin high-/spl kappa/ gate dielectric
2. Atomic Layer Deposition of High-<tex>$kappa$</tex>Dielectric for Germanium MOS Applications—Substrate Surface Preparation
3. Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate
4. Ultrathin<tex>$hbox Al_2hbox O_3$</tex>and<tex>$hboxHfO_2$</tex>Gate Dielectrics on Surface-Nitrided Ge
5. Electrical characterization of germanium p-channel MOSFETs
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