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Recent research development of FinFETs

  • Published:2016-10-24 Issue:12 Volume:59 Page:
  • ISSN:1674-7348
  • Container-title:Science China Physics, Mechanics & Astronomy
  • language:en
  • Short-container-title:Sci. China Phys. Mech. Astron.

Author:

Xie Qian,Xu Jun

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Reference15 articles.

1. M. Li, Sci. China-Phys. Mech. Astron. 55, 2316 (2012).

2. I. Ferain, C. A. Colinge, and J. P. Colinge, Nature 479, 310 (2011).

3. D. Hisamoto, W. C. Lee, J. Kedzierski, H. Takeuchi, K. Asano, C. Kuo, E. Anderson, T. J. King, J. Bokor, and C. M. Hu, IEEE Trans. Electron Devices 47, 2320 (2000).

4. K. Liao, X. X. Cui, N. Liao, K. S. Ma, D. Wu, W. Wei, R. Li, and D. S. Yu, Sci. China Inf. Sci. 57, 042408 (2014).

5. K. S. Ma, X. X. Cui, K. Liao, N. Liao, D. Wu, and D. S. Yu, Sci. China Inf. Sci. 58, 042403 (2015).

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study on Effect of Si-SiO2 and SiGe-HfO2 to Design 8nm Double Gate MOSFET with Applications;2023 IEEE Devices for Integrated Circuit (DevIC);2023-04-07

2. A 10 nm FINFET and its application;2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON);2022-11-26

3. Impact of the mole fraction modulation on the RF / DC performance of GaAs 1− x Sb x FinFET;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2021-09-14

4. Analysing the Behaviour of 14 nm, 10 nm, 7 nm FinFET and Predicting the Superiority Among the Lot;Advances in Communication, Devices and Networking;2021-08-31

5. Performance investigation of a novel GaAs1-xSbx-on-insulator (GASOI) FinFET: Role of interface trap charges and hetero dielectric;Materials Today Communications;2021-03
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