Understanding of interface structures and reaction mechanisms induced by Ge or GeO diffusion in Al2O3/Ge structure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4819127
Reference17 articles.
1. Physics of Semiconductor Devices
2. A 32nm logic technology featuring 2nd-generation high-k + metal-gate transistors, enhanced channel strain and 0.171μm2 SRAM cell size in a 291Mb array
3. Evidence of low interface trap density in GeO2∕Ge metal-oxide-semiconductor structures fabricated by thermal oxidation
4. (Invited) Oxidation, Diffusion and Desorption in a Ge/GeO2 System
5. Radical oxidation of germanium for interface gate dielectric GeO2 formation in metal-insulator-semiconductor gate stack
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1. Annealing Effects on the Charging–Discharging Mechanism in Trilayer Al2O3/Ge/Al2O3 Memory Structures;ACS Applied Electronic Materials;2024-01-17
2. FROM Si NANOWIRES TO Ge NANOCRYSTALS FOR VIS-NIR-SWIR SENSORS AND NON-VOLATILE MEMORIES: A REVIEW;Annals of the Academy of Romanian Scientists Series on Physics and Chemistry;2022
3. Effects of Ge-related storage centers formation in Al2O3 enhancing the performance of floating gate memories;Applied Surface Science;2021-03
4. Substrate damage in ion-implanted (100) germanium after extended ms flash lamp annealing: Origins and suppression;Materials Science in Semiconductor Processing;2021-02
5. Modulation of electrical properties and current conduction mechanism of HfAlO/Ge gate stack by ALD-derived Al2O3 passivation layer;Journal of Alloys and Compounds;2017-02
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