Author:
Toriumi Akira,Wang Shengkai,Lee Choong-Hyun,Yoshida Mahoro,Kita Koji,Nishimura Tomonori,Nagashio Kosuke
Abstract
The effects of oxidation, diffusion, and desorption in a Ge/GeO2 system on the Ge/GeO2 stack formation process for Ge-CMOS are discussed. The GeO desorption is a key to understanding and to establishing the Ge gate stack formation process. High-pressure O2 oxidation has dramatically improved Ge/GeO2 MIS capacitors. This aspect of gate stack formation in Ge is quite different from that in Si.
Publisher
The Electrochemical Society
Cited by
20 articles.
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