Author:
Saini Gaurav,Choudhary Sudhanshu
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modeling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference28 articles.
1. International Technology Roadmap for Semiconductor (ITRS) for Radio Frequency and Analog/Mixed-Signal Technologies Summary, 2013 Edition. www.itrs.net (2015)
2. Hisamoto, D., Lee, Wen-Chin, Kedzierski, J., Takeuchi, H., Asano, K., Kuo, C., Anderson, Erik, King, Tsu-Jae, Bokor, J., Hu, Chenming: FinFET—a self-aligned double-gate MOSFET scalable to 20 nm. IEEE Trans. Electron Devices 47(12), 2320–2325 (2000)
3. Nowak, E.J., Aller, I., Ludwig, T., Kim, K., Joshi, R.V., Chuang, C.T., Bernstein, K., Puri, R.: Turning silicon on its edge [double gate CMOS/FinFET technology]. IEEE Circuits Devices Mag. 20(1), 20–31 (2004)
4. Intel’s Revolutionary 22 nm Transistor Technology. http://download.intel.com/newsroom/kits/22nm/pdfs/22nmDetails_Presentation.pdf
5. Trivedi, V., Fossum, J.G., Chowdhury, M.M.: Nanoscale FinFETs with gate-source/drain underlaps. IEEE Trans. Electron Devices 52(1), 56–62 (2005)
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