Thermal and electrical performance investigation of FinFET with encased air-gap gate sidewalls from spacer encapsulation layer material and structure parameter perspectives-Reference-Cited by-同舟云学术

Thermal and electrical performance investigation of FinFET with encased air-gap gate sidewalls from spacer encapsulation layer material and structure parameter perspectives

Published:2020-09 Issue: Volume:103 Page:104846
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Huang Ning,Liu Weijing,Li Qinghua,Bai Wei,Tang Xiadong,Yang Ting

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

General Engineering

Reference21 articles.

1. Asymmetric dual-k spacer trigate FinFET for enhanced analog/RF performance;Saini;J. Journal of Computational Electronics.,2016

2. FinFET with encased air-gap spacers for high-performance and low-energy circuits;Sachid;J. IEEE Electron Device Letters,2017

3. Numerical study on the self-heating effects for vacuum/high-k gate dielectric tri-gate FinFETs;Zhang;J. Microelectronics Reliability.,2019

4. Physical insights into electric field modulation in dual-k spacer asymmetric underlap FinFET;Dutta;J. Ieee Transactions on Electron Devices,2016

5. Analytical layout dependent NBTI degradation modeling based on non-uniformly distributed interface traps;Li;J. IEEE Transactions on Device and Materials Reliability,2018

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2. Analysis of Underlap Tri-Gate FinFET and Its Capacitance Effects for Analog/Radio Frequency Applications;Journal of Nanoelectronics and Optoelectronics;2023-09-01

3. Design and Compressive Analysis of Junctionless Multigate FinFET Towards Low Power and High Frequency Applications;Silicon;2021-11-08