Performance Evaluation of Junctionless FinFET using Spacer Engineering at 15 nm Gate Length
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-022-01820-6.pdf
Reference27 articles.
1. Moore GE (1965) Cramming more components onto integrated circuits. Proc IEEE 86:82–85
2. Hisamoto D, Lee CW, Kedzierski J, Takeuchi H, Asano K, Kuo C, Anderson E, King TJ, Bokor J, Hu C (2000) FinFET-a self-aligned double-gate MOSFET scalable to 20 nm. IEEE Trans Electron Devices 47:2320–2325
3. Colinge JP (2010) FinFETs and other multi-gate transistors. Springer, New York
4. Colinge JP, Lee CW, Afzalian A, Akhavan ND, Yan R, Ferain I, Razavi P, O’Neill B, Blake A, White M, Kelleher MA, McCarthy B, Murphy R (2010) Nanowire transistors without junctions. Nature Nanotechnol 5:225–229
5. Colinge JP, Lee CW, Akhavan ND, Yan R, Ferain I, Razavi P, Kranti A, Yu R (2011) Junctionless transistors: physics and properties. Semiconductor-on-insulator materials nanoelectron appl. Springer-Verlag Berlin Heidelberg, pp 187–200
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