Junctionless Transistors: Physics and Properties
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Publisher
Springer Berlin Heidelberg
Link
http://link.springer.com/content/pdf/10.1007/978-3-642-15868-1_10.pdf
Reference10 articles.
1. Colinge, J.P., Lee, C.W., Afzalian, A., Dehdashti Akhavan, N., et al.: Nanowire transistors without junctions. Nat. Nanotechnol. 5, 225 (2010)
2. Lee, C.W., Afzalian, A., Dehdashti Akhavan, N., Yan, R., et al.: Junctionless multigate field-effect transistor. Appl. Phys. Lett. 94, 053511 (2009)
3. Skotnicki, T., Merckel, G., Pedron, T.: The voltage-doping transformation: a new approach to the modeling of MOSFET short-channel effects. IEEE Electron Device Lett. 9, 109 (1988)
4. Skotnicki, T.: Heading for decananometer CMOS—is navigation among icebergs still a viable strategy? In: Proceedings of the 30th European Solid-State Device Research Conference (ESSDERC) (2000)
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