1. P. B. Zantye, A. Kumar and A. K. Sikdar, Chemical mechanical planarization for microelectronics applications, Material Science and Engineering, R 45 (2004) 89–220.
2. G. C. C. Yang, CMP wastewater management using the concepts of design for environment, Environmental Progress, 21 (1) (2002).
3. P. Liu, X. C. Lu, Y. H. Liu, J. B. Luo and G. S. Pan, Chemical mechanical planarization of copper using ethylenediamine and hydrogen peroxide based slurry, Advanced Tribology (2010) 908–911.
4. D. H. Eom, I. K. Kim, J. H. Han and J. G. Park, The effect of hydrogen peroxide in a citric acid based copper slurry on Cu polishing, J. of Electrochemical Society, 154 (1) (2007) D38–D44.
5. R. Ihnfeldt, Chemically impregnated abrasives provide high planarization efficiency copper CMP slurry, J. of Electrochemical Society, 61 (17) (2014) 1–13.