Single-Ended Boost-Less (SE-BL) 7T Process Tolerant SRAM Design in Sub-threshold Regime for Ultra-Low-Power Applications
Author:
Publisher
Springer Science and Business Media LLC
Subject
Applied Mathematics,Signal Processing
Link
http://link.springer.com/content/pdf/10.1007/s00034-015-0086-5.pdf
Reference33 articles.
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3. I. Carlson, S. Andersson, S. Natarajan, A. Alvandpour, A high density, low leakage, 5T SRAM for embedded caches, in Proceedings of 30th European Solid State Circuits Conference, pp. 215–218, 2004
4. I.J. Chang, J.-J. Kim, S.P. Park, K. Roy, A 32 kb 10T sub-threshold SRAM array with bit-interleaving and differential read scheme in 90 nm CMOS. IEEE J. Solid-State Circuits 44(2), 650–658 (2009)
5. M.-F. Chang, S.-W. Chang, P.-W. Chou, W.-C. Wu, A 130 mV SRAM with expanded write and read margins for sub-threshold applications. IEEE J. Solid-State Circuits 46(2), 520–529 (2011)
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