Publisher
Springer Science and Business Media LLC
Subject
Applied Mathematics,Signal Processing
Reference43 articles.
1. S. Ahmad, B. Iqbal, N. Alam, M. Hasan, Low leakage fully half-select-free robust SRAM cells with BTI reliability analysis. IEEE Trans. Dev. Mater. Reliab. 18(3), 337–349 (2018)
2. S. Ahmad, M.K. Gupta, N. Alam, M. Hasan Single-ended Schmitt Trigger based robust low power SRAM cell. IEEE Trans. Very Large Scale Integr. (VLSI) Syst. 20(8), 2634–2642 (2016)
3. R.N. Asli, S. Taghipour, Reliable and high performance asymmetric FinFET SRAM cell using back-gate control. Microelectron Reliab 104, 113545 (2020)
4. P.F. Butzen, R.P. Ribas, Leakage current in sub-micrometer CMOS gates. Universidade Federal do Rio Grande do Sul (2017) [online]. http://inf.ufrgs.br/logics/docman/book_emicro_butzen.pdf
5. B.H. Calhoun, A.P. Chandrakasan, Static noise margin variation for subthreshold SRAM in 65-nm CMOS. IEEE J. Solid-State Circuits 41(7), 1673–1679 (2006)
Cited by
16 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献