A 130 mV SRAM With Expanded Write and Read Margins for Subthreshold Applications-Reference-Cited by-同舟云学术

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A 130 mV SRAM With Expanded Write and Read Margins for Subthreshold Applications

Published:2011-02 Issue:2 Volume:46 Page:520-529
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Chang Meng-Fan,Chang Shi-Wei,Chou Po-Wei,Wu Wei-Cheng

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/4/5702419/05658117.pdf?arnumber=5658117

Cited by 87 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Design of low power SRAM cells with increased read and write performance using Read - Write assist technique;e-Prime - Advances in Electrical Engineering, Electronics and Energy;2024-03

3. Reliable single-ended ultra-low power GNRFETs-based 9T SRAM cell with improved read and write operations;Microelectronics Reliability;2024-02

4. Design and Performance Benchmarking of 8T SRAM Cell using Dynamic Feedback Control;2023 IEEE Industrial Electronics and Applications Conference (IEACon);2023-11-06

5. Energy-Efficient Single-Ended Read/Write 10T Near-Threshold SRAM;IEEE Transactions on Circuits and Systems I: Regular Papers;2023-05

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