Impact of Dual Material Gate Design and Retrograde Channel Doping on β-Ga2O3 MOSFET for High Power and RF Applications
Author:
Funder
University Grants Commission
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-022-02079-7.pdf
Reference34 articles.
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2. Shi J, Zhang J, Yang L, Qu M, Qi DC, Zhang KH (2021) Wide bandgap oxide semiconductors: from materials physics to optoelectronic devices. Adv Mater 33(50):2006230. https://doi.org/10.1002/adma.202006230
3. Pearton SJ, Ren F, Tadjer M, Kim J (2018) Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS. J Appl Phys 124(22) https://doi.org/10.1063/1.5062841
4. Wang C, Zhang, Xu S, Zhang C, Feng Q, Zhang Y, Ning J,Zhao S, Zhou H, Hao Y (2021) Progress in state-of-the-art technologies of Ga2O3 devices. J Phys D Appl Phys 54(24):243001 IOP Publishing Ltd https://doi.org/10.1088/1361-6463/abe158
5. Jia, X, Hu H, Han G, Liu Y, Hao Y (2021) Analytical Model for the Channel Maximum Temperature in Ga2O3 MOSFETs. Nanoscale Res Lett 16(1) https://doi.org/10.1186/s11671-021-03490-6
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