Performance Analysis of Heterojunction and Hetero Dielectric Triple Material Double Gate TFET
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-021-01355-2.pdf
Reference22 articles.
1. Choi WY, Lee W (2010) Hetero-gate-dielectric tunneling field-effect transistors. IEEE Trans Electron Devices 57(9):2317–2319
2. Sushree AS, Rupam G, Mohapatra SK (2019) Characteristics enhancement of hetero dielectric DG TFET using SiGe pocket at source/channel interface :Proposal and investigation. Silicon 12:513–520. Springer. https://doi.org/10.1007/s12633-019-00159-9
3. Sheeja H, Rani C, Bhoopathy Bagan K, Nirmal D, Solomon Roach R (2019) Enhancement of performance in TFET by reducing high-K dielectric length and drain electrode thickness. Silicon 12:2337–2343. Springer. https://doi.org/10.1007/s12633-019-00328-w
4. Sheeja H, Rani C, Bhoopathy Bagan K, Solomon Roach R (2020) Improved drain current characteristics of germanium source triple material double gate hetero-dielectric stacked TFET for low power applications. Silicon 13:2753–2762. Springer. https://doi.org/10.1007/s12633-020-00556-5
5. Kumar S, Ekta Goel K, Singh B, Singh P, Kumar K, Baral, Jit S (2017) 2-D Analytical modeling of the electrical characteristics of dual-material double-gate TFETs with a SiO2/HfO2 stacked gate-oxide structure. IEEE Trans Electron Devices 64(3):960–968
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