Characteristic Enhancement of Hetero Dielectric DG TFET Using SiGe Pocket at Source/Channel Interface: Proposal and Investigation
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s12633-019-00159-9.pdf
Reference21 articles.
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3. Priya GL, Balamurugan NB (2019) New dual material double gate junctionless tunnel FET: subthreshold modeling and simulation. AEU-International J Electron Commun 99:130–138
4. Saurabh S, Kumar MJ (2011) Novel attributes of a dual material gate nanoscale tunnel field-effect transistor. IEEE Trans Electron Devices 58:404–410
5. Abdi DB, Kumar MJ (2014) Controlling ambipolar current in tunneling FETs using overlapping gate-on-drain. IEEE J Electron Devices Soc 2:187–190
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