Optimization of Dual Material Based Dielectric Modulated Heterojunction Double Gate Tunnel FETs with Noise Reduction Analysis for High Frequency Applications
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Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s12633-024-02987-w.pdf
Reference47 articles.
1. Boucart K, Ionescu AM (2007) Double-gate tunnel FET with high k gate dielectric. IEEE Trans Electron Devices 54:1725–1733. https://doi.org/10.1109/TED.2007.899389
2. Sivasankaran K, Mallick PS (2013) A comparative study of radio frequency stability performance of double gate MOSFET and double gate tunnel FET. Proc 013 Int Conf Green Comput Commun Conserv Energy, ICGCE, 220–224. https://doi.org/10.1109/ICGCE.2013.6823432
3. Pal A, Dutta AK (2016) Analytical drain current modeling of double gate tunnel field-effect transistors. IEEE Trans Electron Devices 63:3213–3221. https://doi.org/10.1109/TED.2016.2581842
4. Vedvrat, Yasin MY, Gupta V, Pandey D (2023) Improved switching and analog/RF behaviour of SiGe heterojunction dielectric modulated dual material nano silicon tunnel FET for low power applications. SILICON 16:1297–1308. https://doi.org/10.1007/s12633-023-02755-2
5. Yang Zhaonian (2016) Tunnel field-effect transistor with an L shaped gate. IEEE Electron Device Lett 37:839–842. https://doi.org/10.1109/LED.2016.2574821
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