Improved Switching and Analog/RF Behaviour of SiGe Heterojunction Dielectric Modulated Dual Material Nano Silicon Tunnel FET for Low Power Applications-Reference-Cited by-同舟云学术

Improved Switching and Analog/RF Behaviour of SiGe Heterojunction Dielectric Modulated Dual Material Nano Silicon Tunnel FET for Low Power Applications

Published:2023-11-14 Issue: Volume: Page:
ISSN:1876-990X
Container-title:Silicon
language:en
Short-container-title:Silicon

Author:

Vedvrat ,Yasin Mohd Yusuf,Gupta Vidyadhar,Pandey Digvijay

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s12633-023-02755-2.pdf

Reference42 articles.

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2. International Roadmap for Devices and Systems (IRDS): More Moore (2017) https://irds.ieee.org/images/files/pdf/2017/2017IRDS_ES.pdf. Accessed 6 Oct 2020

3. Wong HSP, Frank DJ, Solomon PM, Wann CHJ, Welser JJ (1999) Nanoscale CMOS. Proc IEEE 87:537–570

4. Ionescu AM, Riel H (2011) Tunnel field-effect transistors as energy efficient electronic switches. Nat Nanotechnol 479:329–337. https://doi.org/10.1038/nature10679

5. Liu H, Datta S, Narayanan V (2013) Steep switching tunnel FET: A promise to extend the energy efficient roadmap for post-CMOS digital and analog/RF applications. In: International symposium on low power Electronics and Design (ISLPED). IEEE, pp 145–150

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