A comparative study of radio frequency stability performance of Double Gate MOSFET and Double Gate Tunnel FET-Reference-Cited by-同舟云学术

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A comparative study of radio frequency stability performance of Double Gate MOSFET and Double Gate Tunnel FET

Published:2013-12 Issue: Volume: Page:
ISSN:
Container-title:2013 International Conference on Green Computing, Communication and Conservation of Energy (ICGCE)
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Author:

Sivasankarana K.,Mallickb P S

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6815876/6823387/06823432.pdf?arnumber=6823432

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimization of Dual Material Based Dielectric Modulated Heterojunction Double Gate Tunnel FETs with Noise Reduction Analysis for High Frequency Applications;Silicon;2024-04-12

2. Electrical Noise Analysis of Polarity Gate JLTFET;2023 9th International Conference on Signal Processing and Communication (ICSC);2023-12-21

3. SELBOX TFET and DTD TFET for DC and RF/Analog Applications;Lecture Notes in Electrical Engineering;2022

4. Optimization of Ferroelectric SELBOX TFET and Ferroelectric SOI TFET;ECS Journal of Solid State Science and Technology;2020-01-21

5. Low-frequency noise analysis of heterojunction SELBOX TFET;Applied Physics A;2018-11-22

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