Ge-Source Based L-Shaped Tunnel Field Effect Transistor for Low Power Switching Application
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-021-01475-9.pdf
Reference33 articles.
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4. Ionescu AM, Riel H (2011) Tunnel field-effect transistors as energy efficient electronic switches. Nature 479(7373):329–337
5. Chander S, Sinha SK, Kumar S, Singh PK, Baral K, Singh K, Jit S (2017) Temperature analysis of Ge/Si heterojunction SOI-tunnel FET. Superlattice. Microst. 110:162–170
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