Steep-Subthreshold Bilayer Tunnel Field-Effect Transistor-Based Efficient pH Sensing: Performance Characterization and Optimization-Reference-Cited by-同舟云学术

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Steep-Subthreshold Bilayer Tunnel Field-Effect Transistor-Based Efficient pH Sensing: Performance Characterization and Optimization

Published:2024-08 Issue:8 Volume:8 Page:1-4
ISSN:2475-1472
Container-title:IEEE Sensors Letters
language:
Short-container-title:IEEE Sens. Lett.

Author:

Kumar Prateek¹,Kumar Naveen²^ORCID,Dixit Ankit²^ORCID,Bagga Navjeet³^ORCID,Dasgupta Sudeb⁴^ORCID,Georgiev Vihar²^ORCID

Affiliation:

1. Electronics and Communication Department, National Institute of Technology Jalandhar, Jalandhar, India

2. DeepNano Group, James Watt School of Engineering, University of Glasgow, Glasgow, U.K.

3. School of Electrical Sciences, Indian Institute of Technology Bhubaneswar, Bhubaneswar, India

4. Indian Institute of Technology Roorkee, Roorkee, India

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/7782634/10589446/10572289.pdf?arnumber=10572289

Reference23 articles.

1. Feedback FET: A novel transistor exhibiting steep switching behavior at low bias voltages

2. Design and investigation of extended source F-type nano field effect transistor using non-equilibrium Green's function

3. Effects of the Variation of Ferroelectric Properties on Negative Capacitance FET Characteristics

4. Tunnel FET technology: A reliability perspective

5. Simulation study of multi-source heterojunction TFET based capacitor. Less 1-T DRAM for low power application;Chander;Mater. Sci. Eng. B,2023

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