A new stacked gate oxide L-shaped tunnel field effect transistor
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Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s10825-024-02183-4.pdf
Reference58 articles.
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3. Ram, M.K., Tiwari, N., Abdi, D.B., Saurabh, S.: Drain induced barrier widening and reverse short channel effects in tunneling FETs: investigation and analysis. IEEE Access. 9, 150366–150372 (2021). https://doi.org/10.1109/ACCESS.2021.3125856
4. Liu, L., Mohata, D., Datta, S.: Scaling length theory of double-gate interband tunnel field-effect transistors. IEEE Trans. Electron Devices 59, 902–908 (2012)
5. Sinha, S.K., Chaudhury, S.: Impact of oxide thickness on gate capacitance—a comprehensive analysis on MOSFET, nanowire FET, and CNTFET devices. IEEE Trans. Nanotechnol. 12(6), 958 (2013)
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