Author:
Panchanan Suparna,Maity Reshmi,Baidya Achinta,Maity Niladri Pratap
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Reference67 articles.
1. Pei G, Kedzierski J, Oldiges P, Ieong M, Kan E-C (2002) FinFET design considerations based on 3-D simulation and analytical modeling. IEEE Trans Electron Devices 49(8):1411–1419
2. Maity N, Maity R, Baishya S (2019) An analytical model for the surface potential and threshold voltage of a double-gate heterojunction tunnel FinFET. J Comput Electron 18(1):65–75
3. Lederer D et al (2006) Dependence of FinFET RF performance on fin width. In: Digest of Papers. 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. IEEE, pp 4
4. Srivastava N, Mani P (2022) Modeling analysis and geometric investigation of SOI FinFET for RF/AF Parameters. Silicon:1–9
5. Kaushal S, Rana AK, Sharma R (2021) Performance evaluation of negative capacitance junctionless finfet under extreme length scaling. Silicon 13(10):3681–3690
Cited by
10 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献