Author:
Lalnunfeli H.,Maity Reshmi,Tiwari R. C.,Dutta Shankar,Maity Niladri Pratap
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Hardware and Architecture,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference37 articles.
1. Chakraborti H, Maity R, Maity NP (2019) Analysis of surface potential for dual-material-double-gate MOSFET based on modeling and simulation. Microsyst Technol 25:4675–4684
2. Chakraborti H, Maity R, Baishya S, Maity NP (2021) An accurate model for threshold voltage analysis of dual material double gate metal oxide semiconductor field effect transistor. Silicon 13:1851–1861
3. Chakraborti H, Maity R, Baishya S, Maity NP (2022) An accurate model of threshold voltage and effect of high-K material for fully depleted graded channel DMDG MOSFET. Silicon 14:9763–9772
4. Chen L, Mehregany (2008) A silicon carbide capacitive pressure sensor for in-cylinder pressure measurement. Sensors and Actuators 145:2–8
5. Doody CB, Cheng X, Rich CA, Lemmerhirt DF, White RD (2010) Modeling and characterization of CMOS-fabricated capacitive micromachined ultrasound transducers. J Microelectromech Syst 20(1):104–118
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