Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Reference45 articles.
1. Nicollian, E. H. and Brews, J. R. (2002). MOS (metal oxide semiconductor) physics and technology. Wiley
2. Neamen, D. (2017). Semiconductor physics and devices. McGraw Hill
3. Cerdeira A, Moldovan O, Iñiguez B, Estrada M (2008) Modeling of potentials and threshold voltage for symmetric doped double gate MOSFETs. Solid State Electron 52:830–837
4. Maity NP, Maity R, Thapa RK, Baishya S (2015) Effect of image force on tunneling current for ultra thin oxide layer based metal oxide semiconductor devices. Nanosci Nanotechnol Lett 7(4):331–333
5. Maity NP, Maity R, Baishya S (2017) Voltage and oxide thickness dependent tunneling current density and tunnel resistivity model: application to high-k material HfO2 based MOS devices. Supperlattices and Microstructures 111:628–641
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