An Improved 4H-SiCMESFET with Un-Doped and Recessed Area under the Gate for High Power Applications
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-020-00699-5.pdf
Reference27 articles.
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3. F.-P. Chen, Y.-M. Zhang, H.-L. Lu, Q.-W. Song (2010) Simulation research on offset field-plate used as edge termination in 4H-SiC merged PiN-Schottky diodes. Chinese Physics B. 19
4. Zhu CL, Rusli PZ (2007) Dual-channel 4H-SiC metal semiconductor field effect transistors. Solid-State Electronic 83:72–74
5. Rusli CL, Zhu P, Zhao JH, Xia (2006) Characterization of SiC MESFETs with narrow channel layer. Microelectron Eng 83:72–74
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