Author:
Rusli ,Zhu C.L.,Zhao P.,Xia J.H.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference5 articles.
1. Physical Simulation of Drain-Induced Barrier Lowering Effect in SiC MESFETs
2. RF Characteristics of Short-Channel SiC MESFETs
3. C.L. Zhu, Rusli, C.C. Tin, S.F. Yoon, J. Ahn, in: Proceedings of the 7th IEEE International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), Beijing, China, vol. 3, 2004, p. 2309.
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19 articles.
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