A Novel SOI MESFET to Improve the Equipotential Contour Distributions by Using an Oxide Barrier
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s12633-018-9962-5.pdf
Reference27 articles.
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3. Deng X, Zhang B, Li Z, Chen Z (2008) Two-dimensional analysis of the surface state effects in 4H-SiC MESFETs. Microelectron Eng 85(2):295–299
4. Zhu C, Zhao P (2007) Dual-channel 4H-SiC metal semiconductor field effect transistors. Solid State Electron 51(3):343–346
5. Ramezani Z, Orouji AA, Agharezaei H (2016) A novel symmetrical 4H–SiC MESFET: an effective way to improve the breakdown voltage. J Comput Electron 15(1):163–171
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