Two-dimensional analysis of the interface state effect on current gain for a 4H–SiC bipolar junction transistor
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference22 articles.
1. 1000-V, 30-A 4H-SiC BJTs with high current gain
2. 4 kV 4H-SiC epitaxial emitter bipolar junction transistors
3. Temperature dependence of the current gain in power 4H-SiC NPN BJTs
4. Fabrication and Characterization of High-Current-Gain 4H-SiC Bipolar Junction Transistors
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3. Review of gallium oxide based field-effect transistors and Schottky barrier diodes;Chinese Physics B;2019-01
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5. High current gain 4H-SiC bipolar junction transistor;Journal of Semiconductors;2016-04
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