Funder
National Natural Science Foundation of China
Subject
General Physics and Astronomy,General Materials Science
Reference31 articles.
1. Analysis of the electrical activation data in thermally annealed implanted Al/4H–SiC systems: a novel approach based on cooperativity;Boldrini;Mater. Sci. Semicond. Process.,2022
2. Monolithic Reverse Blocking 1.2 kV 4H-SiC Power Transistor: A Novel, Single-Chip, Three-Terminal Device for Current Source Inverter Applications;Kanale,2022
3. Reliable Evaluation Method for Interface State Density and Effective Channel Mobility in Lateral 4H-SiC MOSFETs;Valletta,2022
4. High-voltage avalanche 4H-SiC diodes with a protective semi-insulating Area;Ivanov;Tech. Phys. Lett.,2021
5. Effects of neutron irradiation on the static and switching characteristics of high-voltage 4H-SiC p-type gate turn-off thyristors;Dong;IEEE Trans. Electron. Dev.,2019
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