Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Reference30 articles.
1. Augustine Fletcher AS, Nirmal D (2017) A survey of gallium nitride HEMT for RF and high power application. Superlat Micro Journ 109:519–537
2. Amano H, Baines Y, Beam E, Borga M, Bouchet T, Chalker PR, Charles (2018) The 2018 GaN power electronics roadmap. J Phys D Appl Phys 51:1–49
3. Herbecq N, Roch I, Linge A, Zegaoui M, Olivier P, Rouger N, Medjdoub F (2016) Above 2000V breakdown voltage at 600 K GaN-on- silicon high electron mobility transistors. Journ of Phys. Status Solid A 213(4):873–877
4. Augustine Fletcher AS, Nirmal D, Arivazhagan L, Ajayan J, Varghese A (2020) Enhancement of Johnson figure of merit in III-V HEMT combined with discrete field plate and AlGaN blocking layer. RF micro Comp-aid Eng 30(2):1–9
5. Wang Z, Cao J, Sun R, Wang F, Yao Y (2018) Numerical investigation on AlGaN/GaN short channel HEMT with AlGaN/InGaN/AlGaN quantum well plate. Superlat Microst 120:753–758
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