Above 2000 V breakdown voltage at 600 K GaN-on-silicon high electron mobility transistors-Reference-Cited by-同舟云学术

Above 2000 V breakdown voltage at 600 K GaN-on-silicon high electron mobility transistors

Published:2016-01-08 Issue:4 Volume:213 Page:873-877
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Herbecq Nicolas¹,Roch-Jeune Isabelle¹,Linge Astrid¹,Zegaoui Malek¹,Jeannin Pierre-Olivier²³,Rouger Nicolas²³,Medjdoub Farid¹

Affiliation:

1. Institute of Electronic; Microelectronic and Nanotechnology, Avenue Poincare; 59652 Villeneuve d'Ascq France

2. University Grenoble Alpes; G2Elab, 21 rue des martyrs; 38000 Grenoble France

3. CNRS; G2Elab; 38000 Grenoble France

Funder

French Defence Ministry

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201532572/fullpdf

Reference20 articles.

1. AlGaN/GaN/AlGaN Double Heterostructures Grown on 200 mm Silicon (111) Substrates with High Electron Mobility

2. Above 600 mS/mm Transconductance with 2.3 A/mm Drain Current Density AlN/GaN High-Electron-Mobility Transistors Grown on Silicon

3. Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit

4. B. Lu E. L. Piner T. Palacios 2010

5. Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers

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